● Available ★Indude SOI Process | |||||
Tech. | BCD | HV CMOS | Mixed-Signal | Logic | e-NVM |
0.13μm/0.11μm | ● | ● | ● | ||
0.18μm/0.153μm | ● | ● | ● | ● | ● |
0.25μm | ● | ● | |||
0.35μm | ● | ● | ● | ||
0.5μm | ● ★ | ● | ● | ● | ● |
>0.5μm | ● | ● | ● | ||
>1.0μm | ● | ● | ● | ||
MEMS | Pressure sensor,Microphone sensor,Photoelectric MEMS and Thermopiles sensor are available. Accelerometer,Gas sensorand Micro-mirrorare under development. |
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Special Device | APD/SPAD are underdevelopment. |
★Advanced BCD Available ▲Advanced BCD Developing ●HV /UHV BCDAvailable ⊙Include SOI Process | |||||||
0.11μm | 0.153μm | 0.18μm | 0.25μm | 0.5μm | 0.8μm | 1.0μm | |
12V | ★ | ★ | ★ | ★ | |||
18V | ★ | ★ | ★ | ★ | |||
24V | ★ | ★ | ★ | ★ | |||
30V | ★ | ★ | ★ | ★ | |||
40V | ★ | ★ | ★ | ● | ● | ||
60V | ★ | ★ | |||||
80V | ★ | ||||||
120V | ★ | ●⊙ | |||||
200V | ▲ | ●⊙ | ● | ● | |||
600V | ●⊙ | ● | ● | ||||
700V | ● | ● | ● | ||||
1200V | ● |