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Compound Wafer
InP (Indium Phosphide)
1. The current peak-valley ratio of InP devices is higher than GaAs devices, so InP devices have higher conversion efficiency than GaAs devices.
2. The inertia energy time constant is small and only half of GaAs, so its operating frequency limit is twice higher than GaAs devices.
3 the thermal conductivity is higher than GaAs, which is more conducive to the manufacture of cw devices. 4. InP devices based on InP materials have better noise characteristics;

Product Detail
 

InP Wafers Specification
Type Semi-Insulated N-Type P-Type NP Type
Dopant Fe S, Sn Zn Undoped
Growth Method  VGF
Diameter 2", 3", 4", 6"
Orientation (100)±0.5°
Thickness  (µm)  350-675um ±25um
OF/IF US EJ
Carrier Concentration - (0.8-8)*1018 (0.8-8)*1018 (1-10)*1015
Resistivity (ohm-cm) >0.5*107 - - -
 Mobility (cm2/V.S.) >1000 1000-2500 50-100 3000-5000
Etch Pitch Density (/cm2) <5000 <5000 <500 <500
TTV  [P/P] (µm) <10
TTV  [P/E] (µm) <15
Warp (µm) <15
Surface Finished P/P, P/E, E/E

Indium phosphide (InP)

Indium phosphide (InP) is one of the important iii-v compound semiconductor materials and a new generation of electronic functional materials after Si and GaAs.
Because the InP in melting point temperature to 1335 + 7 k, p extract from 27.5 ATM, so InP polycrystalline synthesis is relatively difficult, crystal growth is much more difficult, the whole process always under high temperature and high pressure, so the InP crystal is difficult to obtain, and the growth of single crystal under high temperature and high pressure, the thermal stress is big also, so wafer processing is difficult, plus InP stacking fault can lower, easy to produce twin, the high quality of InP crystal preparation more difficult.
So the current InP polishing of the same area is 3~5 times more expensive than GaAs. However, the research on InP materials is far less in-depth and extensive than Si, GaAs and other materials.

Under high electric field, the electron peak drift speed is higher than that in GaAs, which is a good material for the preparation of ultra-high speed and ultra-high frequency devices.

InP is better than GaAs in some properties as the material of transfer electronic effect devices
The direct transition bandgap of InP is 1.35ev, which corresponds to the band with the smallest transmission loss in optical fiber communication.

InP has better thermal conductivity and better heat dissipation efficiency than GaAs
InP is an important substrate material: preparation of semi - insulator single crystal


Compared with GaAs material, InP material has the following advantages in device fabrication:

1. The current peak-valley ratio of InP devices is higher than GaAs devices, so InP devices have higher conversion efficiency than GaAs devices.
2. The inertia energy time constant is small and only half of GaAs, so its operating frequency limit is twice higher than GaAs devices.
3 the thermal conductivity is higher than GaAs, which is more conducive to the manufacture of cw devices. 4. InP devices based on InP materials have better noise characteristics;


InP as substrate material mainly has the following applications:

Photoelectric devices, including light source (LED, LD) and detector (PD, APD avalanche photodetector), are mainly used in optical fiber communication system.

Photoelectric integrated circuit (OEIC) with integrated laser, optical detector and amplifier is an indispensable part of the new generation 40Gb/s communication system, which can effectively improve the reliability of devices and reduce the size of devices.

The bandgap width of InP is 1.34ev. InP solar cell with high conversion efficiency and high radiation resistance is used in space satellite solar cell, which plays an important role in promoting the development and utilization of future aviation technology.

Electronic devices include high-speed high-frequency microwave devices (metal insulated fet, HEMT high electron mobility transistor and HBT heterocrystalline tube)

InP - based devices are also widely used in millimeter wave communication, anti - collision system, image sensor and other new fields.

At present, the application of InP microwave devices and circuits is still mainly concentrated in the military area. With the progress of various technologies, InP microelectronic devices will definitely transition to both military and civilian use, so InP will have an inestimable development prospect.
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